split dual si/sic hybrid igbt module 100 amperes/1200 volts 1 QID1210007 preliminary description: powerex igbt modules are designed for use in high frequency applications; upwards of 30 khz for hard switching applications and 80 khz for soft switching applications. each module consists of two igbt transistors with each transistor having a reverse- connected super-fast recovery free-wheel silicon carbide schottky diode. all components and inter - connects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. features: lo w e sw(off) alumin um nitride isolation discrete super-fast recovery free-wheel silicon carbide schottky diode low internal inductance 2 individual switches per module isolat ed baseplate for easy heat sinking c opper baseplate r ohs compliant applications: ener gy saving power systems such as: f ans; pumps; consumer appliances high f requency type power systems such as: ups; high speed motor drives; induction heating; welder; robotics high t emperature power systems such as: p ower electronics in electric vehicle and aviation systems outline drawing and circuit diagram dimensions inches millimeters a 4.32 109.8 b 2.21 56.1 c 0.71 18.0 d 3.700.02 94.00.5 e 2.026 51.46 f 3.17 80.5 g 1.96 49.8 h 1.00 25.5 k 0.87 22.0 l 0.266 6.75 m 0.26 6.5 n 0.59 15.0 p 0.586 14.89 dimensions inches millimeters q 0.449 11.40 r 0.885 22.49 s 1.047 26.6 t 0.15 3.80 u 0.16 4.0 v 0.30 7.5 w 0.045 1.15 x 0.03 0.8 y 0.16 4.0 z 0.47 12.1 aa 0.17 dia. 4.3 dia. ab 0.10 dia. 2.5 dia. ac 0.08 dia. 2.1 dia. g1 (15 - 16) e1 (13 - 14) c1 (10 - 12) e2 c2 e1 c1 s1g1 s2g2 e1 (7 - 9) g2 (19 - 20) e2 (17 - 18) c2 (4 - 6) e2 (1 - 3) p q q q t r s d 1 2 3 4 5 6 7 8 9 10 11 12 15 14 13 16 19 18 17 20 f a l w v t g b m n c h k detail "a" x u detail "a" e aa ab z y ac detail "b" detail "b" 11/14 rev. 1 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com information presented is based upon manufacturers testing and projected capabilities. this information is subject to change without notice. the manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
2 absolute maximum ratings, t j = 25c unless otherwise specifed ratings symbol QID1210007 units junction temperature t j C40 t o 150 c storage temperature t stg C40 t o 150 c collector-emitter voltage (g-e short) v ces 1200 v olts gate-emitter voltage (c-e short) v ges 20 v olts collector current (t c = 25c) i c 1 00* amper es peak collector current i cm 200* amperes emitter current** (t c = 25c) i e 75* amperes repetitive peak emitter current (t c = 25c)** i em 1 50 * amper es maximum collector dissipation (t c = 25c, t j 150c) p c 730 watts mounting torque, m6 mounting 40 in-lb weight 270 grams isolation voltage (main terminal to baseplate, ac 1 min.) v iso 2500 v olts igbt electrical characteristics, t j = 25c unless otherwise specifed characteristics symbol test conditions min. typ. max. units collector-cutoff current i ces v ce = v ces , v ge = 0v 1.0 ma gate leakage current i ges v ge = v ges , v ce = 0v 0.5 a gate-emitter threshold voltage v ge(th) i c = 10ma, v ce = 10v 4.5 6.0 7.5 volts collector-emitter saturation voltage v ce(sat) i c = 100a, v ge = 15v, t j = 25c 5.0 6.5 volts i c = 100a, v ge = 15v, t j = 125c 5.0 volts total gate charge q g v cc = 600v, i c = 100a, v ge = 15v 450 nc input capacitance c ies 16 nf output capacitance c oes v ce = 10v, v ge = 0v 1.3 nf reverse transfer capacitance c res 0.3 nf inductive t urn-on delay time t d(on) v cc = 600v, i c = 100a, tbd ns load rise t ime t r v ge1 = v ge2 = 15v, tbd ns switch t urn-off delay time t d(off) r g = 3.1, tbd ns t imefall time t f inductive load switching operation tbd ns * pulse width and repetition rate should be such that device junction temperature (t j ) does not exceed t j(max) rating. **represents characteristics of the anti-parallel, emitter-to-collector silicon carbide schottky diode (fwdi). QID1210007 split dual si/sic hybrid igbt module 100 amperes/1200 volts powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com preliminary 11/14 rev. 1 information presented is based upon manufacturers testing and projected capabilities. this information is subject to change without notice. the manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
3 preliminary reverse schottky diode characteristics, t j = 25 c unless otherwise specifed characteristics symbol test conditions min. typ. max. units diode forward voltage v fm i f = 75a, v ge = -5v 1.45 1.75 volts i f = 75a, v ge = -5v, t j = 175c 1 .95 2.35 volts diode reverse current i r v r = 1200v 0.9 5.0 ma v r = 1200, t j = 175c 6.0 33.3 ma diode capacitive charge q c v r = 1200v, i f = 75a, di/dt = 1100a/s 300 nc thermal and mechanical characteristics, t j = 25 c unless otherwise specifed characteristics symbol test conditions min. typ. max. units thermal resistance, junction to case r th(j-c) q per igbt 1/2 module, 0.17 c/w t c reference point under chips thermal resistance, junction to case r th(j-c) d per fwdi 1/2 module, t c reference 0.50 c/w t c reference point under chips contact thermal resistance r th(c-f) per 1/2 module, thermal grease applied 0.04 c/w external gate resistance r g 3.1 31 internal inductance l int igbt part 10 nh QID1210007 split dual si/sic hybrid igbt module 100 amperes/1200 volts powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 11/14 rev. 1 information presented is based upon manufacturers testing and projected capabilities. this information is subject to change without notice. the manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
4 gate-emitter voltage, v ge , (volts) collector-emitter saturation voltage, v ce(sat) , (volts) collector-emitter saturation voltage characteristics (typical) 10 6 8 10 1412 16 18 20 8 6 4 2 0 t j = 25c gate-emitter voltage, v ge , (volts) collector current, i c , (amperes) transfer characteristics (typical) 200 150 0 5 15 100 50 0 20 v ge = 10v t j = 25c t j = 125c i c = 200a i c = 100a i c = 40a collector-emitter voltage, v ce , (volts) collector current, i c , (amperes) output characteristics (typical) 0 2 4 6 8 10 50 0 v ge = 20v 10 11 12 13 14 15 9 8 t j = 25 c 100 150 200 10 collector-current, i c , (amperes) collector-emitter saturation voltage, v ce(sat) , (volts ) collector-emitter saturation voltage characteristics (typical) 9 4 5 6 3 0 50 150 7 2 8 1 0 200 v ge = 15v t j = 25c t j = 125c 100 QID1210007 split dual si/sic hybrid igbt module 100 amperes/1200 volts powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com preliminary 11/14 rev. 1 information presented is based upon manufacturers testing and projected capabilities. this information is subject to change without notice. the manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
5 preliminary collector current, i c , (amperes) 10 3 10 1 10 2 10 2 10 0 10 1 switching time, (ns) half-bridge switching characteristics (typical) v cc = 600v v ge = 15v r g = 3.1 t j = 125c inductive load 10 3 tbd collector-emitter voltage, v ce , (volts) capacitance, c ies , c oes , c res , (nf) capacitance vs. v ce (typical) 10 0 10 2 10 2 10 1 10 0 10 -1 10 1 v ge = 0v c ies c oes c res 10 -1 0 0.5 1.0 1.5 2.52.0 3.0 0 75.0 50.0 62.5 25.0 37.5 12.5 forward voltage, v f , (volts) forward current, i f , ( a) free-wheel schottky diode forward characteristics (typical) t j = 25 c t j = 125 c t j = 150 c t j = 175 c gate charge, q g , (nc) gate-emitter voltage, v ge , (volts) gate charge vs. v ge 20 0 16 12 8 4 0 100 200 400300 500 600 700 v cc = 600v v cc = 400v i c = 100a QID1210007 split dual si/sic hybrid igbt module 100 amperes/1200 volts powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 11/14 rev. 1 information presented is based upon manufacturers testing and projected capabilities. this information is subject to change without notice. the manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
6 collector current, i c , (amperes) switching loss, e sw(on) , e sw(off) , (mj/pulse) 10 1 10 1 10 2 10 0 10 -1 v cc = 600v v ge = 15v r g = 3.1 t j = 125c inductive load c snubber at bus 10 3 switching loss vs. collector current (typical) e sw(on) e sw(off) gate resistance, r g , (?) switching loss, e sw(on) , e sw(off) , (mj/pulse) 10 2 10 0 10 1 10 1 10 0 v cc = 600v v ge = 15v i c = 100a t j = 125c inductive load c snubber at bus 10 2 switching loss vs. gate resistance (typical) e sw(on) e sw(off) emitter current, i e , (amperes) reverse recovery switching loss, e rr , (mj/pulse) 10 2 10 1 10 2 10 1 10 0 v cc = 600v v ge = 15v r g = 3.1 t j = 125c inductive load c snubber at bus 10 3 reverse recovery switching loss vs. emitter current (typical) tbd tbd tbd gate resistance, r g , (?) reverse recovery switching loss, e rr , (mj/pulse) 10 2 10 0 10 1 10 1 10 0 v cc = 600v v ge = 15v i e = 100a t j = 125c inductive load c snubber at bus 10 2 reverse recovery switching loss vs. gate resistance (typical) tbd QID1210007 split dual si/sic hybrid igbt module 100 amperes/1200 volts powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com preliminary 11/14 rev. 1 information presented is based upon manufacturers testing and projected capabilities. this information is subject to change without notice. the manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
7 preliminary time, (s) transient thermal impedance characteristics (igbt & fwdi) 10 0 10 -5 10 -4 10 -3 10 -1 10 -2 10 -3 10 -3 10 -2 10 -1 10 0 10 1 10 -1 10 -2 10 -3 z th = r th ? (normalized value) single pulse t c = 25c per unit base = r th(j-c) = 0.17c/w (igbt) r th(j-c) = 0.50c/w (fwdi) normalized transient thermal impedance, z th(j-c') QID1210007 split dual si/sic hybrid igbt module 100 amperes/1200 volts powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 11/14 rev. 1 information presented is based upon manufacturers testing and projected capabilities. this information is subject to change without notice. the manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
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